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| geometry principal device types cmlt3820g cmpt3820 cxt3820 gross die per 5 inch wafer 25,536 process CP382X small signal transistor npn - low v ce(sat) transistor chip process details die size 26 x 26 mils die thickness 5.9 mils base bonding pad area 5.5 x 5.5 mils emitter bonding pad area 5.5 x 5.5 mils top side metalization al - 30,000? back side metalization au - 12,000? www.centralsemi.com r0 (9-september 2010)
process CP382X typical electrical characteristics www.centralsemi.com r0 (9-september 2010) |
Price & Availability of CP382X
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